Accession Number : ADD014478

Title :   Process for Fabricating Self-Aligned Field Emitter Arrays.

Descriptive Note : Patent Application, Filed 2 Feb 90,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Campisi, George J ; Gray, Henry F

Report Date : 02 Feb 1990

Pagination or Media Count : 10

Abstract : This patent application discloses a process for fabricating self-aligned field emitter arrays using a self-leveling planarization technique, e.g. spin-on processes, is disclosed which includes the steps of depositing a dielectric layer on top of an array of field emitters, depositing a thin conducting film over the dielectric layer, and applying a planarization layer on the thin conducting film. Thereafter the structure is selectively etched until the underlying conducting layer is exposed in regions surrounding the field emitters, thereby defining the grid apertures. The conducting layer and dielectric layer are then selectively etched sequentially to a depth sufficient to expose a field emitter cathode tip at each field emitter site. This invention uses the concept of self-leveling, planarizing material to define the grid apertures. After defining the aperture hole size and location, then appropriate etching processes can form the apertures themselves thereby exposing the sharp field emitters which yield an integrally gridded three-dimensional field emitter array structure. Keywords: Patents; Serial number 473,752; N.C. 69,325; Field emission; Electronics. (jg)

Descriptors :   *ARRAYS, *EMITTERS, *FIELD EMISSION, *PATENT APPLICATIONS, ALIGNMENT, APERTURES, DIELECTRICS, ELECTRONICS, ETCHING, FIELD EQUIPMENT, GRIDS, HOLES(OPENINGS), LAYERS, PATENTS, SELF OPERATION, SHARPNESS, SITES, SIZES(DIMENSIONS), SPINNERS

Subject Categories : Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE