Accession Number : ADD014488

Title :   Bloch-Line Memory Element and RAM Memory.

Descriptive Note : Patent, Filed 28 May 87, patented 13 Feb 90,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Schwee, Leonard J

Report Date : 13 Feb 1990

Pagination or Media Count : 12

Abstract : The present invention relates to a Bloch-line memory element and a nonvolatile RAM memory using such a Bloch-line memory element. The Bloch-line memory element comprises a planar magnetic memory element having magnetic domains separated by a wall which contains a Bloch-line disposed within the individual memory element. Coincident write lines interact with the magnetic element for writing a Bloch-line to a predetermined area within the memory element. For sensing the presence or absence of a Bloch-line within the predetermined area, one write conductor and a sense line are used for determining the logic state of the particular memory element. A plurality of memory elements are disposed in an address matrix and can be selected for reading from or writing to the particular Bloch-line RAM memory element for determining or writing bits of words. Keywords: Data storage systems; Memory devices; Patents. (kt)

Descriptors :   *DATA STORAGE SYSTEMS, *MAGNETIC MATERIALS, *MEMORY DEVICES, *PATENTS, *RANDOM ACCESS COMPUTER STORAGE, LOGIC, MAGNETIC DOMAINS, MAGNETIC FIELDS, NONVOLATILE MEMORIES, PLANAR STRUCTURES

Subject Categories : Computer Hardware

Distribution Statement : APPROVED FOR PUBLIC RELEASE