Accession Number : ADD014517

Title :   Scanning Electron Microscopy by Photovoltage Contrast Imaging.

Descriptive Note : Patent, Filed 18 May 89, patented 20 Feb 90,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Flesner, Larry D

Report Date : 20 Feb 1990

Pagination or Media Count : 6

Abstract : A process and apparatus are disclosed for remotely determining electrical properties of a semiconductor. A surface of the semiconductor is simultaneously irradiated with an electron beam to generate secondary electrons from the irradiated surface and with a modulated light beam. Secondary electrons emitted by the semiconductor are filtered by an electron energy analyzer. An electron detector receives the filtered electrons and provides an output corresponding to electrical properties of the irradiated area. The output is provided to a computer which calculates the difference in output between periods when the semiconductor is being illuminated with the light beam and when it is not so illuminated. The time dependence of the output may also be measured. Patents. (jhd)

Descriptors :   *ANALYZERS, *ELECTRON ENERGY, *PATENTS, *PHOTOVOLTAIC EFFECT, *SCANNING ELECTRON MICROSCOPES, *SECONDARY EMISSION, *SEMICONDUCTORS, *SURFACE PROPERTIES, CONTRAST, DETECTORS, ELECTRICAL PROPERTIES, ELECTRON BEAMS, ELECTRON MICROSCOPY, ELECTRONS, FILTERS, IMAGES, IRRADIATION, LIGHT, MODULATION, TIME DEPENDENCE

Subject Categories : Test Facilities, Equipment and Methods
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE