Accession Number : ADD014523

Title :   High Frequency, Frequency Multiplier Using Parallel Gunn Diodes.

Descriptive Note : Patent Application, Filed 30 Mar 90,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Ancona, Mario

Report Date : 30 Mar 1990

Pagination or Media Count : 22

Abstract : An object of this invention is to increase the frequency of a Gunn effect oscillator by at least an integer factor. In its broadest form, the invention is a Gunn-effect frequency multiplier having a plurality of semiconducting elements capable of supporting Gunn-effect domains; a cathode and an anode, common to all said semiconducting elements, connecting said elements in parallel; and means for sequentially creating a dipole domain in each of said semiconducting elements during a time substantially less than or equal to the shortest transit time of a dipole domain between said anode for any of said semiconducting elements. Patent application. (jes)

Descriptors :   *GUNN DIODES, *SEMICONDUCTOR DEVICES, DIPOLES, FREQUENCY MULTIPLIERS, GUNN EFFECT, HIGH FREQUENCY, NUMBERS, OSCILLATORS, PARALLEL ORIENTATION, PATENT APPLICATIONS

Subject Categories : Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE