Accession Number : ADD014543

Title :   Yoked Orthogonally Distributed Equal Reactance Non-Coplanar Traveling Wave Amplifier.

Descriptive Note : Patent, Filed 27 Aug 87, patented 3 Apr 90,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Yoder, Max N ; Morgan, Michael A

Report Date : 03 Apr 1990

Pagination or Media Count : 8

Abstract : This patent discloses a Field Effect Transistor (FET) device especially useful in common gate amplifiers of signals in the microwave to millimeter range. The device's input and output are impedance matched to preclude phase cancellation and form a traveling wave amplifier capable of high voltage operation. The channel is formed of gallium arsenide separated from the gate by a layer of aluminum arsenide heteroepitaxial with gallium arsenide layer. The channel is bounded by heavily doped regions which act as inherent sources and drains, and limit electric field strength to avoid sluggish response of heavy mass carriers. The gates are formed by etching trenches in a semi-insulating gallium arsenide layer on the opposite side of the aluminum arsenide layer from the channel using the aluminum arsenide as an etch stop, oxidizing the exposed aluminum arsenide, and epitaxially growing gallium arsenide to narrow the trench. The resulting gate is disposed on opposite side of the channel from the source and drain contacts thus significantly improving gate-drain breakdown voltage. (JHD)

Descriptors :   *AMPLIFIERS, *FIELD EFFECT TRANSISTORS, *GATES(CIRCUITS), *PATENTS, *TRAVELING WAVES, ALUMINUM ARSENIDES, BREAKDOWN(ELECTRONIC THRESHOLD), CANCELLATION, CHANNELS, DOPING, DRAINAGE, ELECTRIC FIELDS, ETCHING, EXPOSURE(GENERAL), FIELD INTENSITY, GALLIUM ARSENIDES, HIGH VOLTAGE, INPUT, INSULATION, LAYERS, MICROWAVE FREQUENCY, MILLIMETER WAVES, OPERATION

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE