Accession Number : ADD014608

Title :   Long Wavelength Infrared Detector with Heterojunction.

Descriptive Note : Patent Application, Filed 18 Jun 90,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Chu, Tak-Kin

Report Date : 18 Jun 1990

Pagination or Media Count : 9

Abstract : An infrared radiation detector having a first semiconductor layer deposited on a substrate to form a diode junction with an overlay contact, is rendered more effective to detect long wavelength radiation by deposit of a second semiconductor layer between the first layer and the overlay contact in a heterojunction arrangement. The semiconductor materials are selected so as to separate radiation absorbing and electrical functions respectively performed within the two layers and to produce an enhanced output across the diode junction between the first layer and the overlay contact. Patent applications. (SDW)

Descriptors :   *FAR INFRARED RADIATION, *INFRARED DETECTORS, *LONG WAVELENGTHS, ELECTRICAL PROPERTIES, FUNCTIONS, HETEROJUNCTIONS, INFRARED RADIATION, JUNCTION DIODES, LAYERS, MATERIALS, OVERLAYS, PATENT APPLICATIONS, RADIATION, RADIATION ABSORPTION, SEMICONDUCTORS, SUBSTRATES

Subject Categories : Infrared Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE