Accession Number : ADD014789

Title :   Formation of Epitaxial SI-GE Heterostructures by Solid Phase Epitaxy.

Descriptive Note : Patent, Filed 15 Dec 89, patented 4 Dec 90,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Prokes, Sharka M ; Tseng, Wen F ; Christou, Aristos

Report Date : 04 Dec 1990

Pagination or Media Count : 4

Abstract : Epitaxial Ge-Si heterostructures are currently of interest due to their potentially useful optical- and electronic properties. Epitaxial Si-Ge heterostructures are formed by depositing a layer of amorphous Si-Ge on the silicon wafer is then subjected to a wet oxidation in order to form an epitaxial Si-Ge heterostructure. Any size wafer may be used and no special precautions need be taken to ensure a clean amorphous Si-Ge/Si interface.

Descriptors :   ELECTRONICS, EPITAXIAL GROWTH, MOISTURE, OXIDATION, SILICON, SOLID PHASES, WAFERS

Subject Categories : Inorganic Chemistry
      Electrical and Electronic Equipment
      Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE