Accession Number : ADD014789
Title : Formation of Epitaxial SI-GE Heterostructures by Solid Phase Epitaxy.
Descriptive Note : Patent, Filed 15 Dec 89, patented 4 Dec 90,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Prokes, Sharka M ; Tseng, Wen F ; Christou, Aristos
Report Date : 04 Dec 1990
Pagination or Media Count : 4
Abstract : Epitaxial Ge-Si heterostructures are currently of interest due to their potentially useful optical- and electronic properties. Epitaxial Si-Ge heterostructures are formed by depositing a layer of amorphous Si-Ge on the silicon wafer is then subjected to a wet oxidation in order to form an epitaxial Si-Ge heterostructure. Any size wafer may be used and no special precautions need be taken to ensure a clean amorphous Si-Ge/Si interface.
Descriptors : ELECTRONICS, EPITAXIAL GROWTH, MOISTURE, OXIDATION, SILICON, SOLID PHASES, WAFERS
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE