Accession Number : ADD014794

Title :   Multiband Photoconductive Detector Based on Layered Semiconductor Quantum Wells.

Descriptive Note : Patent, Filed 29 Jun 89, patented 4 Dec 90,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Bishop, Stephen G ; Shanabrook, Benjamin V

Report Date : 04 Dec 1990

Pagination or Media Count : 8

Abstract : A multiband photoconductive detector and method for simultaneously and separately detecting and distinguishing light or radiation from a large number of different wavelength bands is disclosed. The multiband photoconductive detector comprises a plurality of low energy gap semiconductor layers of preselected progressively decreasing thickness of a first material, a plurality of high energy gap semiconductor layers of a second material interleaved with the plurality of low energy gap semiconductor layers, and a plurality of pairs of electrical contacts respectively applied to the plurality of low energy gap semiconductor layers and adapted to respectively receive associated bias voltages to enable the plurality of low energy gap semiconductor layers to constitute a corresponding plurality of separate photoconductive detectors with a preselected plurality of different wavelength bands. (Author)

Descriptors :   BIAS, DETECTORS, ELECTRIC CONTACTS, FREQUENCY, FREQUENCY BANDS, LAYERS, MATERIALS, PHOTOCONDUCTIVITY, PHOTODETECTORS, QUANTUM ELECTRONICS, SEMICONDUCTORS, THICKNESS, VOLTAGE

Subject Categories : Solid State Physics
      Quantum Theory and Relativity

Distribution Statement : APPROVED FOR PUBLIC RELEASE