Accession Number : ADD014819

Title :   A Buried Heterostructure Laser Modulator.

Descriptive Note : Patent Application, Filed 31 Oct 90,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Rode, Daniel L ; Sciortino, John C

Report Date : 31 Oct 1990

Pagination or Media Count : 16

Abstract : A buried-heterostructure laser modulator for modulating a laser beam includes two adjacent thin epitaxial first layers of oppositely doped semi-conductor material and a thin epitaxial buried layer of undoped semi-conductor material located between the two adjacent first layers. The buried layer forms a single mode optical channel having a width larger than a height thereof with the width equal to or greater than a width of a diffraction limited waveguide mode of the laser beam. Two thin epitaxial second layers of similarly and heavily doped semiconductor material are provided respectively adjacent the respective first layers of the same doping. One of these second layers is provided on a side of a semi-insulating substrate and two strip lines of opposite bias are provided on the side of the substrate and connect to a respective second layer of the same bias. The two adjacent first layers are preferably A1GaAs and the buried layer is preferably GaAs with a width less than about 1.5 microns and a height about 0.2 microns.

Descriptors :   BURIED OBJECTS, CHANNELS, DIFFRACTION, DOPING, EPITAXIAL GROWTH, INSULATION, LASER BEAMS, LASER MODULATORS, LAYERS, MATERIALS, OPTICAL PROPERTIES, SEMICONDUCTORS, SIDES, STRIP TRANSMISSION LINES, SUBSTRATES, THINNESS, WAVEGUIDES

Subject Categories : Electrooptical and Optoelectronic Devices
      Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE