Accession Number : ADD014929

Title :   Long Wavelength Infrared Detector with Heterojunction.

Descriptive Note : Patent filed 18 Jun 90, Patented 30 Apr 91,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Chu, Tak-Kin

Report Date : 30 Apr 1991

Pagination or Media Count : 5

Abstract : An infrared radiation detector having a first semiconductor layer deposited on a substrate to form a diode junction with an overlay contact, is rendered more effective to detect long wavelength radiation by deposit of a second semiconductor layer between the first layer and the overlay contact in a heterojunction arrangement. The semiconductor materials are selected so as to separate radiation absorbing and electrical functions respectively performed within the two layers and to produce an enhanced output across the diode junction between the first layer and the overlay contact.

Descriptors :   ELECTRICAL PROPERTIES, FAR INFRARED RADIATION, FUNCTIONS, HETEROJUNCTIONS, INFRARED DETECTORS, INFRARED RADIATION, JUNCTION DIODES, LAYERS, LONG WAVELENGTHS, MATERIALS, OVERLAYS, RADIATION, RADIATION ABSORPTION, SEMICONDUCTORS, SUBSTRATES

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE