Accession Number : ADD014948

Title :   Planar Gallium Arsenide NPNP Microwave Switch.

Descriptive Note : Patent Application, Filed 27 Jul 90,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Newman, Harvey S

Report Date : 27 Jul 1990

Pagination or Media Count : 12

Abstract : A microwave switch is provided for controlling the transmission of microwave energy in a microstrip transmission line structure. The microwave switch comprises an electrically conducting ground plane in contact with one side of an undoped semiconductor material having on its other side a superlattice of gallium arsenide consisting of a periodic sequence of p- and n-doped gallium arsenide layers. P- and n-type regions are formed integral with and electrically connected to the superlattice, and first and second microstrip transmission lines are electrically connected to respective ones of the n- and p-type regions. (Author)

Descriptors :   CRYSTAL LATTICES, ENERGY, GALLIUM ARSENIDES, GROUND LEVEL, MATERIALS, MICROWAVE EQUIPMENT, MICROWAVE TRANSMISSION, MICROWAVES, N TYPE SEMICONDUCTORS, P TYPE SEMICONDUCTORS, PLANAR STRUCTURES, REGIONS, SEMICONDUCTORS, STRIP TRANSMISSION LINES, SWITCHES, TRANSMISSION LINES, TRANSMITTANCE

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE