Accession Number : ADD014968

Title :   Laser Diode Pumped, Erbium-Doped, Solid State Laser with High Slope Efficiency.

Descriptive Note : Patent, Filed 31 Oct 89, patented 7 May 91,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Esterowitz, Leon ; Allen, Roger E ; Kintz, Gregory J

Report Date : 07 May 1991

Pagination or Media Count : 7

Abstract : A laser and method for producing a laser emission at a wavelength of substantially 2.8 microns is disclosed. In a preferred embodiment of the invention, the laser comprises later diode means for emitting a pump beam at a preselected wavelength; a crystal; and a laser cavity defined by first and second reflective elements at opposing ends of the crystal to form a reflective path there between; the crystal having a preselected host material doped with a predetermined percent concentration of erbium activator ions sufficient to produce a laser emission at substantially 2.8 microns when the crystal is pumped by the laser diode means, a portion of the laser emission at substantially 2.8 microns being outputted from one of the first and second reflective elements at a slope efficiency of at least 5 percent, but preferably 10 percent, when the crystal is pumped by the pump beam.

Descriptors :   ACTIVATION, DIODES, EFFICIENCY, EMISSION, ERBIUM, HIGH RATE, IONS, LASER CAVITIES, LASER PUMPING, LASERS, MATERIALS, PATHS, PUMPS, REFLECTION, REFLECTIVITY, SLOPE, SOLID STATE LASERS

Subject Categories : Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE