Accession Number : ADD014973
Title : TiW Diffusion Barrier for AuZn Ohmic Contact to P-Type InP.
Descriptive Note : Patent, Filed 28 Dec 88, patented 14 May 91,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Boos, John B ; Papanicolaou, Nicolas A ; Weng, Tung H
Report Date : 14 May 1991
Pagination or Media Count : 9
Abstract : A low metal resistance ohmic contact alloyed to p InP material having TiW within the contact as a diffusion barrier layer between an underlay of AuZn and an overlay of Au. A process for fabricating an InP JFET containing a gate contact of respective AuZn, TiW, and Au layers and with the gate contact alloyed to p InP material of a semiconductive gate region provides an improved InP JFET having a low resistance metal alloyed ohmic contact to the gate region. Use of the TiW layer in a multilayer contact alloyed to P InP material leads to unique processing and improved InP semiconductor devices.
Descriptors : BARRIERS, DIFFUSION, ELECTRIC CONTACTS, GATES(CIRCUITS), LAYERS, MATERIALS, METALS, P TYPE SEMICONDUCTORS, REGIONS, RESISTANCE, SEMICONDUCTOR DEVICES, SEMICONDUCTORS
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE