Accession Number : ADD014991

Title :   Resistive Element Using Depletion-Mode Mosfets.

Descriptive Note : Patent, Filed 30 Mar 90, patented 23 Apr 91,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Shoemaker, Patrick A

Report Date : 23 Apr 1991

Pagination or Media Count : 6

Abstract : The present invention provides a linear resistance element comprising a pair of transistors. The transistor pair includes first and second depletion-type field effect transistors each having a gate, a source electrode, a drain electrode, a channel mobility, and a threshold voltage. The source and drain electrodes of each transistor define a source-drain current path through a channel. The first and second transistors are connected with their source-drain paths in series with each other. The gates of the first and second transistors are connected in common to the series connection between the source-drain current paths. The channel width-to-length ratio, channel mobility, and threshold voltage of the first transistor are substantially equal to the corresponding properties of the second transistor. Any number of transistor pairs may be serially connected together.

Descriptors :   CHANNELS, DRAINAGE, ELECTRODES, LINEAR SYSTEMS, MOBILITY, PATHS, RESISTANCE, SOURCES, THRESHOLD EFFECTS, TRANSISTORS, VOLTAGE

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE