Accession Number : ADD015000

Title :   Graded Bandgap Semiconductor Device for Real-Time Imaging.

Descriptive Note : Patent Application, Filed 15 Apr 91,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Mathur, V K

Report Date : 15 Apr 1991

Pagination or Media Count : 9

Abstract : Spectral shift between different wavelength spectra by restricted narrow bandgap absorption of incident radiation at one location on a semiconductor body, under electrical bias causing release of radiation at another emission location as a result of radiative electron-hole recombination. The semiconductor body is a graded bandgap establishing composition of two selected compounds alloyed to a variable, position-dependent degree between the respective radiation and emission locations at which the respective narrow and wide bandgap properties of the compounds prevail. (Author)

Descriptors :   ABSORPTION, BIAS, BROADBAND, ELECTRICAL PROPERTIES, ELECTRONS, EMISSION, ENERGY GAPS, FREQUENCY, HOLES(ELECTRON DEFICIENCIES), IMAGES, LIMITATIONS, NARROWBAND, POSITION(LOCATION), RADIATION, REAL TIME, RELEASE, SEMICONDUCTORS, SHIFTING, SPECTRA

Subject Categories : Infrared Detection and Detectors
      Solid State Physics
      Optics

Distribution Statement : APPROVED FOR PUBLIC RELEASE