Accession Number : ADD015069
Title : Method of Doping Single Crystal Diamond for Electronic Devices.
Descriptive Note : Patent Application, Filed 8 Jul 91,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Kabacoff, Lawrence T
Report Date : 08 Jul 1991
Pagination or Media Count : 11
Abstract : This invention relates to diamonds and more particularly to methods of doping diamonds. It has been widely known for many years that diamond would be greatly superior to either silicon or GaAs as a material for integrated circuits. Reasons include the greater heat conductivity of diamond, the higher carrier mobilities; the higher operating temperatures, and the intrinsic radiating hardness such a chip would possess. The problem has been to find a way to dope diamond with suitable impurities to create n and p type semiconductors. The very compact structure of diamond coupled with the very high c-c bond energies prevent diffusion of dopants into the material. Moreover, diamond has an extremely high melting temperature, making the liquid hard to form.
Descriptors : CARRIER MOBILITY, DIAMONDS, DOPING, ELECTRONIC EQUIPMENT, HIGH TEMPERATURE, IMPURITIES, INTEGRATED CIRCUITS, N TYPE SEMICONDUCTORS, P TYPE SEMICONDUCTORS, SILICON, SINGLE CRYSTALS, THERMAL CONDUCTIVITY
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE