Accession Number : ADD015132

Title :   Long Wavelength Infrared Detector With Heterojunction.

Descriptive Note : Patent,Filed 22 Jan 91, patented 10 Sep 91,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Chu, Tak-Kin

Report Date : 10 Sep 1991

Pagination or Media Count : 4

Abstract : An infrared radiation detector having a first semiconductor layer deposited on a substrate to form a diode junction with an overlay contact, is rendered more effective to detect long wavelength radiation by deposit of a second semiconductor layer between the first layer and the overlay contact in a heterojunction arrangement. The semiconductor materials are selected so as to separate radiation absorbing and electrical functions respectively performed within the two layers and to produce an enhanced output across the diode junction between the first layer and the overlay contact. (Author)

Descriptors :   ELECTRICAL PROPERTIES, FAR INFRARED RADIATION, FUNCTIONS, HETEROJUNCTIONS, INFRARED DETECTORS, INFRARED RADIATION, JUNCTION DIODES, LAYERS, LONG WAVELENGTHS, MATERIALS, OVERLAYS, RADIATION, RADIATION ABSORPTION, SEMICONDUCTORS, SUBSTRATES

Subject Categories : Infrared Detection and Detectors
      Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE