Accession Number : ADD015142

Title :   Process of Three Dimensional Lithography in Amorphous Polymers.

Descriptive Note : Patent, Filed 29 Nov 89, patented 27 Aug 91,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Sonnenschein, Mark F ; Roland, Charles M

Report Date : 27 Aug 1991

Pagination or Media Count : 8

Abstract : A process of three dimensional lithography in amorphous polymers to form an instantaneous, permanent image in the polymer by the steps of providing an undoped, non-crystalline layer or film of a polymer having a stable amorphous stat under human operating conditions. Thin film is preferably poly(ethyleneterphthalate) (PET), poly(aryl-ether-ether-ketone) (PEEK), poly(chloro-trifluoroethylene) (Kel-F), poly(carbonate) (ie LEXAN 9032), poly(sulfone), poly(methylmethacrylate (PMMA, or LUCITE)), a poly (cyanurate) such as bisphenol A dicyanate, or an epoxy (eg. Epon 820). The film can be either self supporting or mounted on a substrate. The film is then covered (and optionally contacted) with a mask which serves to block the radiation from impinging on where no marking is desired. If the mask is in actual contact with the film, it is capable of also acting as a heat sink. Next, the film is exposed through the mask to radiation of sufficient intensity to cause ablation of the exposed areas of imparting a distinct, three-dimensional impression in the film.

Descriptors :   ABLATION, AMORPHOUS MATERIALS, EXPOSURE(GENERAL), HEAT SINKS, IMAGES, LITHOGRAPHY, MASKS, POLYMERS, POLYMETHYL METHACRYLATE, RADIATION, SUBSTRATES, THIN FILMS, THREE DIMENSIONAL

Subject Categories : Polymer Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE