Accession Number : ADD015180

Title :   Method of Forming Nanometer-Scale Trenches and Vias.

Descriptive Note : Patent Application, Filed 24 Oct 91,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Hsu, David S ; Gray, Henry F

Report Date : 24 Oct 1991

Pagination or Media Count : 22

Abstract : Nanometer thick metallic layers are fabricated on trenches or holes (especially vias) within a substrate by depositing, by thermal decomposition of a volatile metal-containing precursor gas in the presence of a carrier gas at low pressure, a metallic layer on a substrate surface on which one or more trenches or holes are formed. The metallic layer thus formed has an extremely small grain size, which permits the attainment of very high spatial resolution and thus permits the formation of extremely small trenches and holes, increasing the attainable memory/circuit density. This invention is useful in the fabrication of ultra-high density trench capacitors and ULSI microelectronic circuits. (Author)

Descriptors :   CIRCUITS, DENSITY, GASES, GRAIN SIZE, HIGH RESOLUTION, LAYERS, LOW PRESSURE, MEMORY DEVICES, METALS, MICROCIRCUITS, PYROLYSIS, SPATIAL DISTRIBUTION, SUBSTRATES, SURFACES, THICKNESS, TRENCHES

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE