Accession Number : ADD015316

Title :   Floating Gate Magnetic Field Sensor.

Descriptive Note : Patent, filed 31 Jul 90, Patented 21 Jan 92,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Kub, Francis J

Report Date : 21 Jan 1992

Pagination or Media Count : 11

Abstract : A magnetic field sensor uses a MOSFET comprising an silicon layer with a source at one end and first and second drains at the other end, and a layer of silicon dioxide applied to the silicon layer between the source and the drain. The gate of the MOSFET is a floating gate assembly provided on the top surface of the silicon dioxide layer and comprising a DC gate for receiving a DC voltage and producing electron charge movement at or near the interface between the silicon and silicon dioxide layers, and first and second floating gates located adjacent to the first and second drains, respectively. A charge splitter channel divides the first floating gate and the first drain from the second floating gate and the second drain. An output signal is taken from each floating gate based upon the electron charges in the silicon dioxide layer below each respective floating gate, wherein the movement of the electron charges is deflected based upon the strength of the magnetic field, thereby causing more electron charges to be deflected towards one or the other of the two floating gates.

Descriptors :   *PATENTS, *GATES(CIRCUITS), ASSEMBLY, CHANNELS, ELECTRONS, INTERFACES, LAYERS, MAGNETIC FIELDS, OUTPUT, SIGNALS, SILICON, SILICON DIOXIDE, SURFACES, VOLTAGE, MOSFET SEMICONDUCTORS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE