Accession Number : ADD015423
Title : Dual Active Layer Photoconductor.
Descriptive Note : Patent, Filed 29 Jun 88, patented 7 Apr 92,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Thompson, Phillip E ; Papanicolaou, Nicolas A ; Boos, J B
Report Date : 07 Apr 1992
Pagination or Media Count : 5
Abstract : A photoconductive semiconductor device having a source, a drain, and a photo-sensitive channel there between. The channel has a surface layer that is highly doped with respect to the remainder of the channel, compensating at least in part for the channel's surface depletion layer. In this manner, the photosensitivity of the device is increased without disproportionately increasing wasted dark current. In a preferred embodiment, the additional doping of the channel's surface layer is done by ion implantation, and the device is a monolith formed of gallium arsenide.
Descriptors : *SEMICONDUCTOR DEVICES, *PATENTS, *PHOTOCONDUCTORS, CHANNELS, DEPLETION, DOPING, IONS, LAYERS, PHOTOSENSITIVITY, SEMICONDUCTORS, SURFACES, ION IMPLANTATION, GALLIUM ARSENIDES
Subject Categories : Electrooptical and Optoelectronic Devices
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE