Accession Number : ADD015432
Title : Method for Fabricating Ohmic Contacts on Semiconducting Diamond.
Descriptive Note : Patent, Filed 29 Jun 89, patented 8 Oct 91,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Zeidler, James R ; Moazed, Khosrow L
Report Date : 08 Oct 1991
Pagination or Media Count : 9
Abstract : A method is disclosed for fabricating ohmic contacts on semiconducting diamond. A carbide forming metal is deposited over a surface of the semiconducting diamond. In some applications, one or more layers of an intermediate metal are deposited over the carbide forming metal. A corrosion resistant metal is then deposited over the intermediate metal, if present, or the carbide forming metal. The semiconducting diamond and metals are heated in an inert environment at a temperature anywhere from 350 to 1200 degrees Celsius.
Descriptors : *ELECTRIC CONTACTS, *PATENTS, CARBIDES, CORROSION, DIAMONDS, LAYERS, METALS, SURFACES, FABRICATION, THERMAL PROPERTIES
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE