Accession Number : ADD015432

Title :   Method for Fabricating Ohmic Contacts on Semiconducting Diamond.

Descriptive Note : Patent, Filed 29 Jun 89, patented 8 Oct 91,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Zeidler, James R ; Moazed, Khosrow L

Report Date : 08 Oct 1991

Pagination or Media Count : 9

Abstract : A method is disclosed for fabricating ohmic contacts on semiconducting diamond. A carbide forming metal is deposited over a surface of the semiconducting diamond. In some applications, one or more layers of an intermediate metal are deposited over the carbide forming metal. A corrosion resistant metal is then deposited over the intermediate metal, if present, or the carbide forming metal. The semiconducting diamond and metals are heated in an inert environment at a temperature anywhere from 350 to 1200 degrees Celsius.

Descriptors :   *ELECTRIC CONTACTS, *PATENTS, CARBIDES, CORROSION, DIAMONDS, LAYERS, METALS, SURFACES, FABRICATION, THERMAL PROPERTIES

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE