Accession Number : ADD015480

Title :   Process for Single Crystal Growth of High T(c) Superconductors.

Descriptive Note : Patent, Filed 25 May 89, patented 7 Jan 92,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Lechter, William L ; Toth, Louis E ; Das, Badri N ; Wolf, Stuart A

Report Date : 07 Jan 1992

Pagination or Media Count : 4

Abstract : Large oriented crystals greater than one millimeter in length of high T, superconducting compounds are grown by mixing starting materials in the correct proportions to make the superconducting compound, forming a mixture. The C02 is removed from the mixture and the ternary oxide of the compound is formed from the mixture. Next, the mixture is formed into a self-supporting green body and sintered at a sintering temperature at which the top of the self-supporting green body is molten and the bottom surface is solid. The self-supporting green body is held at the sintering temperature for a time, forming a sintered body. Next, the sintered body is cooled so that crystals form. After this step, the crystals can be further processed to increase their superconducting properties. Finally, the crystals are removed and processed for use.

Descriptors :   *PATENTS, *CRYSTAL GROWTH, *SINGLE CRYSTALS, *SUPERCONDUCTORS, LENGTH, MATERIALS, MIXING, MIXTURES, OXIDES, SINTERING, SOLIDS, SURFACES

Subject Categories : Electricity and Magnetism
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE