Accession Number : ADD015488

Title :   Method of Nanometer Lithography.

Descriptive Note : Patent, Filed 28 Sep 90, patented 5 May 92,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Hsu, David S

Report Date : 05 May 1992

Pagination or Media Count : 8

Abstract : Nanometer thick vertical metallic structures are fabricated on a substrate by depositing a metallic layer on a substrate surface on which one or more buttresses are formed, etching the metallic layer to expose the horizontal surfaces of the substrate and the buttresses, and etching the substrate to remove the buttresses, thereby producing vertical structures on the substrate. The metallic layer is formed by thermal decomposition of a volatile metal-containing precursor gas in the presence of a carrier gas at low pressure, unlike that in conventional CVD reactors. The metallic layer thus formed has a grain size which is fraction of the thickness of the vertical structure.

Descriptors :   *LITHOGRAPHY, *MONOLITHIC STRUCTURES(ELECTRONICS), *PATENTS, DECOMPOSITION, ETCHING, GRAIN SIZE, LAYERS, LOW PRESSURE, METALS, PRECURSORS, SUBSTRATES, SURFACES, THINNESS

Subject Categories : Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE