Accession Number : ADD015660
Title : Control of Crystallite Size in Diamond Film Chemical Vapor Deposition.
Descriptive Note : Patent, Filed 16 May 91, patented 8 Dec 92,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Moran, Mark B ; Johnson, Linda F ; Klemm, Karl A
Report Date : 08 Dec 1992
Pagination or Media Count : 8
Abstract : In depositing an adhering, continuous, polycrystalline diamond film of optical or semiconductor quality on a substrate, as by forming on the substrate a layer of a refractory nitride interlayer and depositing diamond on the interlayer without mechanical treatment or seeding of the substrate or the interlayer, the substrate is heated in a vacuum chamber containing a microwave activated mixture of hydrogen and a gas including carbon. and the size of deposited diamond crystallites and their rate of deposition selectively varied by a bias voltage applied to the substrate.
Descriptors : *DIAMONDS, *FILMS, *PATENTS, *CHEMICAL REACTIONS, BIAS, CARBON, CHAMBERS, DEPOSITION, HYDROGEN, LAYERS, MICROWAVES, MIXTURES, NITRIDES, POLYCRYSTALLINE, QUALITY, RATES, SEEDING, SEMICONDUCTORS, SUBSTRATES, VACUUM, VACUUM CHAMBERS, VOLTAGE, VAPOR DEPOSITION, CRYSTAL STRUCTURE, OPTICS, REFRACTORY COATINGS, HEAT TREATMENT, GASES
Subject Categories : Physical Chemistry
Ceramics, Refractories and Glass
Coatings, Colorants and Finishes
Distribution Statement : APPROVED FOR PUBLIC RELEASE