Accession Number : ADD015764

Title :   Thin-Film Edge Field Emitter Device and Method of Manufacture Therefore.

Descriptive Note : Patent Application, filed 31 Mar 93,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Gray, Henry F ; Hsu, David S

Report Date : 31 Mar 1993

Pagination or Media Count : 36

Abstract : It is therefore an object of the present invention to provide a field emitter device which substantially eliminates the need for the use of high spatial resolution lithography in its fabrication. It is another object of the present invention to provide a field emitter device having inherent advantages over previous electron sources, including higher emission currents, lower power requirements, less expensive fabrication costs and ease of integration with other circuitry. It is a further object of the present invention to fabricate gated and ungated thin-film edge field emitter devices wherein the spacing between the elements is small enough to enable low voltage operation. It is a further object of the present invention to fabricate FEAs over a large area in a manner which is inexpensive, yet results in an equal or greater degree of precision and reproducibility when compared with other prior art processes

Descriptors :   *ELECTRON EMISSION, *PATENT APPLICATIONS, *EMITTERS, THIN FILMS, CURRENT DENSITY, THERMIONIC EMISSION, PHOTOELECTRONS, ELECTRON BEAMS, ELECTRODES, MANUFACTURING, LITHOGRAPHY

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE