Accession Number : ADD015794
Title : Method for Doping GaAs with High Vapor Pressure Elements.
Descriptive Note : Patent, filed 3 May 91, patented 2 Feb 93,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Tadayon, Bijan ; Tadayon, Saied
Report Date : 02 Feb 1993
Pagination or Media Count : 7
Abstract : A method is disclosed for the incorporation of relatively high vapor pressure elements into good quality GaAs at extremely low T(sub s) using the migration enhanced epitaxy technique. Zinc was doped in GaAs material grown at a low T, of 120 deg C. Zinc may thus be used as a p-type dopant replacing more toxic Be. Similarly, other high vapor pressure elements can be incorporated much more efficiently into the material grown at low T(sub s).
Descriptors : *GALLIUM ARSENIDES, *VAPOR PRESSURE, *ZINC, *PATENTS, *DOPING, *CHEMICAL ELEMENTS, MATERIALS, BERYLLIUM, EPITAXIAL GROWTH, MOLECULAR BEAMS, SEMICONDUCTORS, TRANSITION METALS
Subject Categories : Physical Chemistry
Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE