Accession Number : ADD015813
Title : Apparatus for and a Method of Growing Thin Films of Elemental Semiconductors.
Descriptive Note : Patent, filed 22 Jun 90, patented 6 Jul 93,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Yoder, Max N
Report Date : 06 Jul 1993
Pagination or Media Count : 16
Abstract : An apparatus for and a method of growing thin films of the elemental semiconductors (group IVB), i.e., silicon, germanium, tin, lead. and, especially diamond, using modified atomic layer epitaxial (ALE) growth techniques are disclosed. In addition, stoichiometric and nonstoichiometric compounds of the group IVB elements are also grown by a variation of the method according to the present invention. The ALE growth of diamond thin films is carried-out, inter alia, by exposing a plurality of diamond or like substrates alternately to a halocarbon reactant gas, e.g., carbon tetrafluoride (CF4), and a hydrocarbon reactant gas, e.g., methane (CH4), at substrate temperatures between 300 and 650 Celsius. A stepping motor device portion of the apparatus is controlled by a programmable controller portion such that the surfaces of the plurality of substrates are given exposures of at least 10(exp 15) molecules/sq cm of each of the reactant gases. The chemical reaction time to complete the growth of an individual atom layer is approximately 25 x 10(exp -6) second.
Descriptors : *CARBON TETRAFLUORIDE, *LAYERS, *METHANE, *SEMICONDUCTORS, *THIN FILMS, *PATENTS, *EPITAXIAL GROWTH, *ATOMIC STRUCTURE, ATOMS, CHEMICAL REACTIONS, DIAMONDS, GERMANIUM, HYDROCARBONS, MOLECULES, REACTION TIME, SILICON, SUBSTRATES, SURFACES, TEMPERATURE, TIN, VARIATIONS, GROUP IV COMPOUNDS, LEAD(METAL), STOICHIOMETRY, HALOGENS, GASES
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE