Accession Number : ADD015923
Title : Resistive Gate Magnetic Field Sensor.
Descriptive Note : Patent, Filed 31 Dec 90, Patented 4 May 93,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Kub, Francis J
Report Date : 04 May 1993
Pagination or Media Count : 10
Abstract : A FET device for sensing a magnetic field, the FET device comprising: a semiconductor material having a source at a first position therein and receiving means at a second position therein for receiving charge carriers; bias voltage means for providing a bias voltage between the source and the receiving means to produce a movement of charge carriers between the source and the receiving means; a channel layer disposed within the semiconductor material between the source and the receiving means through which the charge carriers move as a function of the bias voltage and the magnetic field being sensed; a resistive gate disposed between the source and the receiving means and above the channel layer; a first resistive gate contact disposed in a first preselected position with respect to the source; a second resistive gate contact disposed in a second preselected position with respect to the receiving means; a resistive gate voltage means for providing a resistive gate bias voltage between the first and second resistive gate contacts to establish a longitudinal electric field in the channel layer; and output means disposed in the semiconductor material for providing a signal related to the strength of the magnetic field sensed by the FET de vice.
Descriptors : *MAGNETIC FIELDS, *DETECTORS, *PATENTS, *FIELD EFFECT TRANSISTORS, BIAS, CHARGE CARRIERS, ELECTRIC FIELDS, SEMICONDUCTORS, SIGNALS, VOLTAGE, GATES(CIRCUITS)
Subject Categories : Electrical and Electronic Equipment
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE