Accession Number : ADD015925

Title :   Monocrystalline Germanium Film on Sapphire.

Descriptive Note : Patent, Filed 1 Jun 90, Patented 27 Apr 93,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Godbey, David J ; Qadri, Syed B

Report Date : 27 Apr 1993

Pagination or Media Count : 4

Abstract : A monocrystalline germanium film is grown on a sapphire substrate with a (I 102) orientation. The substrate is first pretreated to restructure the (1102) surface plane. Typically, restructuring is accomplished by either an anneal at high temperature or ion bombardment. A monocrystalline germanium layer is grown on the pretreated surface by a vapor deposition process such as molecular beam epitaxy or chemical vapor deposition.

Descriptors :   *FILMS, *GERMANIUM, *SAPPHIRE, *PATENTS, *SINGLE CRYSTALS, HIGH TEMPERATURE, ION BOMBARDMENT, LAYERS, MOLECULAR BEAMS, SUBSTRATES, SURFACES, VAPOR DEPOSITION, ANNEALING, CHEMICAL VAPOR DEPOSITION, EPITAXIAL GROWTH, COMPOSITE MATERIALS

Subject Categories : Physical Chemistry
      Crystallography
      Laminates and Composite Materials

Distribution Statement : APPROVED FOR PUBLIC RELEASE