Accession Number : ADD015932

Title :   Layered Thin-Edged Field-Emitter Device.

Descriptive Note : Patent, Filed 8 Jun 90, patented 25 May 93,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Gray, Henry F

Report Date : 25 May 1993

Pagination or Media Count : 10

Abstract : A field-emitter-array device includes layers of conductive material and intervening layers of insulating material. The lateral edges of the layers form a field-emitter array including a field emitter edge electrode interposed between a pair of control electrodes. The control electrode edges produce an electric field causing the flow of field emitted electrons to be substantially parallel to the plane of the control and field emitter edge electrodes. The direction of electron flow can be further controlled by additional electrodes in the form of additional conductive layers or external electrodes. A process for making the emitter device includes forming a plurality of planar first and second layers of insulating material alternately disposed between first, second and third layers of conductive material, forming a channel through the thickness of the layers and oriented perpendicular thereto, exposing the lateral edges of the layers of conductive and insulating materials adjacent to the channel to form a field emitter edge electrode interposed between a pair of control electrodes. Additional electrodes may be provided to form and deflect the electron flow.

Descriptors :   *EMITTERS, *PATENTS, *THIN FILMS, ARRAYS, CHANNELS, EDGES, ELECTRIC FIELDS, ELECTRODES, MATERIAL FORMING, THICKNESS, FIELD EMISSION, ELECTRIC CONDUCTORS, SILICON DIOXIDE, MICROELECTRONICS, FABRICATION, LITHOGRAPHY

Subject Categories : Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE