Accession Number : ADD015953
Title : Apparatus for Atomic Layer Epitaxial Growth.
Descriptive Note : Patent, Filed 21 Dec 89, patented 19 Feb 91,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Scholz, Christoph
Report Date : 19 Feb 1991
Pagination or Media Count : 10
Abstract : An apparatus for carrying out atomic layer epitaxial growth of a thin semiconductor layer on a substrate surface has a cylindrical chamber in which a substrate holder is coaxially mounted so as to define an annular gap there between. The substrate holder can be in the form of a rotatable turbine wheel and a funnel-shaped hood introduces a reactant gas onto the substrate at an oblique angle.
Descriptors : *PATENTS, *EPITAXIAL GROWTH, *ATOMIC STRUCTURE, LAYERS, SEMICONDUCTORS
Subject Categories : Crystallography
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE