Accession Number : ADD015953

Title :   Apparatus for Atomic Layer Epitaxial Growth.

Descriptive Note : Patent, Filed 21 Dec 89, patented 19 Feb 91,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Scholz, Christoph

Report Date : 19 Feb 1991

Pagination or Media Count : 10

Abstract : An apparatus for carrying out atomic layer epitaxial growth of a thin semiconductor layer on a substrate surface has a cylindrical chamber in which a substrate holder is coaxially mounted so as to define an annular gap there between. The substrate holder can be in the form of a rotatable turbine wheel and a funnel-shaped hood introduces a reactant gas onto the substrate at an oblique angle.

Descriptors :   *PATENTS, *EPITAXIAL GROWTH, *ATOMIC STRUCTURE, LAYERS, SEMICONDUCTORS

Subject Categories : Crystallography
      Atomic and Molecular Physics and Spectroscopy

Distribution Statement : APPROVED FOR PUBLIC RELEASE