Accession Number : ADD016064

Title :   Method of Fabricating Sub-Half-Micron Trenches and Holes.

Descriptive Note : Patent Application, Filed 20 Sep 93,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Hsu, David S

Report Date : 20 Sep 1993

Pagination or Media Count : 48

Abstract : A non-optical method for the formation of sub-half micron holes, vias, or trenches within a substrate. For example, a substrate having at least two buttresses or a trench having a interbuttress distance or a width of 1.0 to 0.5 microns, respectively, is conformally or non-conformally lined with a layer material. Thereafter, the layer material from horizontal surfaces is removed to expose the substrate underneath while leaving the layer material attached to the essentially vertical walls of the buttresses or the trenches essentially intact, thereby, narrowing the interbuttress distance or the trench width, respectively, to sub-half micron dimensions. The exposed substrate surface is then subjected to anisotropic etching to form sub-half micron trenches, holes and vias in the substrate. Finally, the buttress and layer material are removed from the substrate.(Author)

Descriptors :   *PATENT APPLICATIONS, *TRENCHES, *HOLES(ELECTRON DEFICIENCIES), *MICROCIRCUITS, FABRICATION, MICROELECTRONICS, SUBSTRATES, LAYERS, MATERIALS, ANISOTROPY, ETCHING, SURFACES, COMPOSITE MATERIALS

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys
      Laminates and Composite Materials

Distribution Statement : APPROVED FOR PUBLIC RELEASE