Accession Number : ADD016177

Title :   Low Temperature Process for Producing Antimony-Containing Semiconductor Materials.

Descriptive Note : Patent, Filed 8 Jul 91, patented 4 Jan 94,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Gedridge, Robert W , Jr

Report Date : 04 Jan 1994

Pagination or Media Count : 5

Abstract : Tri-isopropylantimony is used as a source of antimony in chemical vapor deposition production of semiconductor materials. The process can be used to introduce antimony as a dopant into III/V and II/VI semiconductor materials.

Descriptors :   *ANTIMONY, *MATERIALS, *PATENTS, *LOW TEMPERATURE, *CHEMICAL VAPOR DEPOSITION, DOPING, COMPOSITE MATERIALS, INFRARED DETECTORS

Subject Categories : Electrical and Electronic Equipment
      Physical Chemistry
      Inorganic Chemistry
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE