Accession Number : ADD016236
Title : Atomic Layer Epitaxy (ALE) Apparatus for Growing Thin Films of Elemental Semiconductors.
Descriptive Note : Patent, Filed 4 Feb 93, patented 25 Jan 94,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Yoder, Max N
Report Date : 25 Jan 1994
Pagination or Media Count : 16
Abstract : An apparatus for and a method of growing thin films of the elemental semiconductors (group IVB), i.e., silicon, germanium, tin, lead, and, especially diamond, using modified atomic layer epitaxial (ALE) growth techniques are disclosed. In addition, stoichiometric and non-stoichiometric compounds of the group IVB elements are also grown by a variation of the method according to the present invention. The ALE growth of diamond thin films is carried-out, inter alia, by exposing a plurality of diamond or like substrates alternately to a halocarbon reactant gas, e.g., carbon tetrafluoride (CF4), and a hydrocarbon reactant gas, e.g., methane (CH4), at substrate temperatures between 300 and 650 Celsius.
Descriptors : *DIAMONDS, *LAYERS, *SEMICONDUCTORS, *THIN FILMS, *PATENTS, *ATOMIC STRUCTURE, *EPITAXIAL GROWTH, *CHEMICAL ELEMENTS, CARBON TETRAFLUORIDE, GERMANIUM, HYDROCARBONS, METHANE, SILICON, SUBSTRATES, TEMPERATURE, TIN, VARIATIONS, GROUP IV COMPOUNDS, LEAD(METAL), STOICHIOMETRY, HALOGENS
Subject Categories : Crystallography
Solid State Physics
Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE