Accession Number : ADD016236

Title :   Atomic Layer Epitaxy (ALE) Apparatus for Growing Thin Films of Elemental Semiconductors.

Descriptive Note : Patent, Filed 4 Feb 93, patented 25 Jan 94,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Yoder, Max N

Report Date : 25 Jan 1994

Pagination or Media Count : 16

Abstract : An apparatus for and a method of growing thin films of the elemental semiconductors (group IVB), i.e., silicon, germanium, tin, lead, and, especially diamond, using modified atomic layer epitaxial (ALE) growth techniques are disclosed. In addition, stoichiometric and non-stoichiometric compounds of the group IVB elements are also grown by a variation of the method according to the present invention. The ALE growth of diamond thin films is carried-out, inter alia, by exposing a plurality of diamond or like substrates alternately to a halocarbon reactant gas, e.g., carbon tetrafluoride (CF4), and a hydrocarbon reactant gas, e.g., methane (CH4), at substrate temperatures between 300 and 650 Celsius.

Descriptors :   *DIAMONDS, *LAYERS, *SEMICONDUCTORS, *THIN FILMS, *PATENTS, *ATOMIC STRUCTURE, *EPITAXIAL GROWTH, *CHEMICAL ELEMENTS, CARBON TETRAFLUORIDE, GERMANIUM, HYDROCARBONS, METHANE, SILICON, SUBSTRATES, TEMPERATURE, TIN, VARIATIONS, GROUP IV COMPOUNDS, LEAD(METAL), STOICHIOMETRY, HALOGENS

Subject Categories : Crystallography
      Solid State Physics
      Electrical and Electronic Equipment
      Inorganic Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE