Accession Number : ADD016267

Title :   Method of Doping Single Crystal Diamond for Electronic Devices.

Descriptive Note : Patent, Filed 8 Jul 91, patented 29 Mar 94,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Kabacoff, Lawrence T ; Barkyoumb, John

Report Date : 29 Mar 1994

Pagination or Media Count : 4

Abstract : A method of doping diamond by (1) ion implanting carbon into the diamond to create a damage zone of opaque, nondiamond material; (2) ion implanting a semiconductor dopant material that is a pentavalent donor dopant or a trivalent acceptor dopant into the damage zone of opaque, nondiamond carbon material; (3) melting the opaque, nondiamond carbon material by lased light; and (4) allowing the carbon melt to cool and crystallize homoepitaxially as diamond from the diamond surfaces during which the dopant material is incorporated into the new diamond lattice.

Descriptors :   *DIAMONDS, *DOPING, *PATENTS, *SINGLE CRYSTALS, *ELECTRONIC EQUIPMENT, CARBON, DAMAGE, IONS, LIGHT, MATERIALS, MELTING, MELTS, REGIONS, SEMICONDUCTORS, SURFACES, COMPOSITE MATERIALS, EPITAXIAL GROWTH, CRYSTAL LATTICES, INTEGRATED CIRCUITS, IMPURITIES

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics
      Inorganic Chemistry
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE