Accession Number : ADD016270

Title :   Method for Fabricating Complementary Enhancement and Depletion Mode Field Effect Transistors on a Single Substrate.

Descriptive Note : Patent, Filed 30 Jun 93, patented 5 Apr 94,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Shimabukuro, Randy L ; Wood, Michael E ; Csanadi, Oswald I

Report Date : 05 Apr 1994

Pagination or Media Count : 11

Abstract : A method for fabricating complementary enhancement and depletion mode field effect transistors on a single substrate comprises the steps of: (a) patterning a structure of a layer of silicon formed on an insulating substrate to form first, second, third, and fourth silicon islands; (b) doping the second island with a n-type dopant; (c) doping the third island with a n-type dopant; (d) doping the fourth island with an n-type dopant; (e) forming a first electrically insulating gate layer on the third and fourth islands; (f) forming a second electrically insulating gate on the first and second islands; (g) forming an electrically conductive gate over the first and second electrically insulating gate layers; (h) doping the second island with an n-type dopant; (i) doping the fourth island with an n-type dopant; (j) doping the first and third islands with a n-type dopant: and (k) doping the first and third islands with a n-type dopant to transform the first island into a n-type enhancement mode field effect transistor, the second island into a n-type enhancement mode field effect transistor, the third island into a n-type depletion mode field effect transistor, and the fourth island into an n-type depletion mode field effect transistor.

Descriptors :   *FIELD EFFECT TRANSISTORS, *PATENTS, *MOSFET SEMICONDUCTORS, AUGMENTATION, DEPLETION, DOPING, SILICON, SUBSTRATES, TRANSISTORS, FABRICATION, GATES(CIRCUITS), METAL OXIDE SEMICONDUCTORS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE