Accession Number : ADD016298

Title :   Implanting Impurities in Semiconductors and Semiconductor Implanted with Impurities.

Descriptive Note : Patent, Filed 26 Aug 91, patented 15 Mar 94,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Moore, Frederick G ; Dietrich, Harry B

Report Date : 15 Mar 1994

Pagination or Media Count : 12

Abstract : A method for ion-implanting a dopant species in semiconductors includes the steps of implanting a dopant species in a semiconductor material at a predetermined rate, the predetermined rate being based on a rate corresponding to a maximum in a characteristic graph of percent activation as a function of dopant species implantation rate; and annealing the dopant implanted semiconductor.

Descriptors :   *SEMICONDUCTORS, *PATENTS, *IMPURITIES, *ION IMPLANTATION, ACTIVATION, ANNEALING, FUNCTIONS, GRAPHS, MATERIALS, RATES, DOPING, ION DENSITY, CURRENTS, SILICON, ELECTRICAL PROPERTIES

Subject Categories : Electrical and Electronic Equipment
      Electricity and Magnetism
      Solid State Physics
      Physical Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE