Accession Number : ADD016353

Title :   Junction Field Effect Transistor with Lateral Gate Voltage Swing (GVS-JFET).

Descriptive Note : Patent, Filed 30 Sep 91, patented 3 May 94,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Kelner, Galina ; Shur, Michael

Report Date : 03 May 1994

Pagination or Media Count : 5

Abstract : A field effect transistor having a buried gate, and one or more gates disposed along the channel between the source and drain, which cooperate to cause the electric field within the channel along its length to be more uniform, and have a lower field maximum. The geometry and/or doping of the channel can be varied to selectively vary the channel resistivity along its length, which also makes the field more uniform. Because of the more uniform field, electrons are exposed to a higher field strength nearer the source, and are accelerated to higher velocities more quickly, reducing the response time and increasing the frequency range of the transistor. Because the peak field is reduced. the transistor can carry more power without reaching breakdown potential within the channel.

Descriptors :   *FIELD EFFECT TRANSISTORS, *PATENTS, *JUNCTION TRANSISTORS, CHANNELS, DOPING, ELECTRIC FIELDS, ELECTRONS, FREQUENCY, GEOMETRY, LENGTH, POWER, RESPONSE, TIME, VELOCITY

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE