Accession Number : ADD016383

Title :   Method of Making a Semiconductor Device Using a Nanochannel Glass Matrix.

Descriptive Note : Patent, Filed 29 Apr 93, patented 26 Apr 94,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Tonucci, Ronald J ; Justus, Brian L

Report Date : 26 Apr 1994

Pagination or Media Count : 21

Abstract : The present invention provides a method of forming a semiconductor device comprising the steps of: forming a glass block of an acid inert glass having acid etchable glass rods extending therethrough, the acid etchable glass rods having an average diameter of less than 1 micron; partially etching one end of the acid etchable rods surface of the glass block to form cavities in the glass block, on one surface thereof having an average diameter of less than 1 micron; depositing material(s) in the cavities to form a semiconductor device. The present invention also provides a method for forming a semiconductor device in which the acid etchable glass rods are completely etched and the deposition material(s) is deposited to fill the nanochannels formed by the etching. The present invention also provides semiconductor devices made by these methods

Descriptors :   *GLASS, *SEMICONDUCTOR DEVICES, *PATENTS, *MATRIX MATERIALS, *CHANNELS, ACIDS, CAVITIES, DEPOSITION, DIAMETERS, ETCHING, MATERIALS, RODS, SURFACES, INERT MATERIALS, COMPOSITE MATERIALS

Subject Categories : Electrical and Electronic Equipment
      Ceramics, Refractories and Glass
      Laminates and Composite Materials

Distribution Statement : APPROVED FOR PUBLIC RELEASE