Accession Number : ADD016385

Title :   Method for Laser-Assisted Etching of III-V and II-VI Semiconductor Compounds Using Chlorofluorocarbon Ambients.

Descriptive Note : Patent, Filed 21 Jan 92, patented 10 May 94,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Russell, Stephen D ; Sexton, Douglas A ; Orazi, Richard J

Report Date : 10 May 1994

Pagination or Media Count : 23

Abstract : An etching process allows a selective single-step patterning of III-V or II-VI semiconductor compound devices such as GaAs and InP or CdS and ZnSe in a noncorrosive environment. The etching relies on a maskless laser-assisted technique in a gaseous chlorofluorocarbon ambient, such as gaseous dichlorodifluoromethane and chloropentafluoroethane. Laser-assisted photothermal chemical etching reactions on the III-V or II-VI semiconductor compounds occur in these ambients when the incident fluence from an excimer laser at 248 nm exceeds the melt threshold. This provides a means for thin membrane formation in III-V or II-VI semiconductor compounds, rapid etches and processing of packaged devices or partially fabricated dies. The reduction in processing steps as compared to conventional wet chemical etches provides improvements in yield, reliability and cost

Descriptors :   *ETCHING, *PATENTS, *SEMICONDUCTOR DEVICES, *LASER BEAMS, COSTS, DICHLORODIFLUOROMETHANE, EXCIMERS, GALLIUM ARSENIDES, LASERS, MELTS, MEMBRANES, PROCESSING, RELIABILITY, SEMICONDUCTORS, INDIUM PHOSPHIDES, SILICON

Subject Categories : Electrical and Electronic Equipment
      Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE