Accession Number : ADD016391

Title :   BaF2/GaAs Electronic Components.

Descriptive Note : Patent Application, filed 19 May 94,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Santiago, Francisco ; Chu, Tak-Kin

Report Date : 19 May 1994

Pagination or Media Count : 23

Abstract : Metal insulator semiconductor field effect transistors (MISFETs), charge coupled devices (CCDs), and capacitors based on an epitaxial barium fluoride (BF2) insulator layer deposited directly onto a single crystal gallium arsenide (GaAs) substrate

Descriptors :   *FIELD EFFECT TRANSISTORS, *SEMICONDUCTORS, CAPACITORS, CHARGE COUPLED DEVICES, FLUORIDES, GALLIUM ARSENIDES, LAYERS, SINGLE CRYSTALS, INTEGRATED CIRCUITS, ELECTRON MOBILITY, EPITAXIAL GROWTH, BARIUM COMPOUNDS, THIN FILMS, CRYSTAL STRUCTURE, PATENT APPLICATIONS

Subject Categories : Electrical and Electronic Equipment
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE