Accession Number : ADD016515
Title : Method of Making a Semiconductor Device by Forming a Nanochannel Mask.
Descriptive Note : Patent, Filed 12 Jun 92, patented 26 Jul 94,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Tonucci, Ronald J ; Justus, Brian L
Report Date : 26 Jul 1994
Pagination or Media Count : 18
Abstract : The present invention provides a method for depositing a pattern of deposited material on or within a substrate, comprising the steps of: interposing a glass mask between a source and a substrate, the mask having channels therethrough which are arranged in a pattern and which have an average diameter of less than 1 micron; and depositing a material selected from the group of sources consisting of ions, electrons, photons, metals and semiconductor materials through the glass mask into or onto the substrate. The present invention also provides semiconductor devices made by this method.
Descriptors : *CHANNELS, *GLASS, *MASKS, *SEMICONDUCTOR DEVICES, *PATENTS, ELECTRONS, MATRIX MATERIALS, IONS, MATERIALS, METALS, PATTERNS, PHOTONS, SUBSTRATES, MANUFACTURING, FABRICATION, DEPOSITION, COMPOSITE MATERIALS, GALLIUM ARSENIDES, QUANTUM WELLS, ALUMINUM GALLIUM ARSENIDES
Subject Categories : Electrical and Electronic Equipment
Laminates and Composite Materials
Mfg & Industrial Eng & Control of Product Sys
Quantum Theory and Relativity
Distribution Statement : APPROVED FOR PUBLIC RELEASE