Accession Number : ADD016515

Title :   Method of Making a Semiconductor Device by Forming a Nanochannel Mask.

Descriptive Note : Patent, Filed 12 Jun 92, patented 26 Jul 94,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Tonucci, Ronald J ; Justus, Brian L

Report Date : 26 Jul 1994

Pagination or Media Count : 18

Abstract : The present invention provides a method for depositing a pattern of deposited material on or within a substrate, comprising the steps of: interposing a glass mask between a source and a substrate, the mask having channels therethrough which are arranged in a pattern and which have an average diameter of less than 1 micron; and depositing a material selected from the group of sources consisting of ions, electrons, photons, metals and semiconductor materials through the glass mask into or onto the substrate. The present invention also provides semiconductor devices made by this method.

Descriptors :   *CHANNELS, *GLASS, *MASKS, *SEMICONDUCTOR DEVICES, *PATENTS, ELECTRONS, MATRIX MATERIALS, IONS, MATERIALS, METALS, PATTERNS, PHOTONS, SUBSTRATES, MANUFACTURING, FABRICATION, DEPOSITION, COMPOSITE MATERIALS, GALLIUM ARSENIDES, QUANTUM WELLS, ALUMINUM GALLIUM ARSENIDES

Subject Categories : Electrical and Electronic Equipment
      Laminates and Composite Materials
      Mfg & Industrial Eng & Control of Product Sys
      Quantum Theory and Relativity

Distribution Statement : APPROVED FOR PUBLIC RELEASE