Accession Number : ADD016543
Title : Graded Bandgap Semiconductor Device for Real-Time Imaging.
Descriptive Note : Patent, Filed 15 Apr 91, patented 6 Sep 94,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Mathur, Veerendra K
Report Date : 06 Sep 1994
Pagination or Media Count : 5
Abstract : Spectral shift between different wavelength spectra by restricted narrow bandgap absorption of incident radiation at one location on a semiconductor body, under electrical bias causing release of radiation at another emission location as a result of radiative electron-hole recombination. The semiconductor body is a graded bandgap establishing composition of two selected compounds alloyed to a variable, position-dependent degree between the respective radiation and emission locations at which the respective narrow and wide bandgap properties of the compounds prevail.
Descriptors : *RADIATION, *SEMICONDUCTORS, *PATENTS, *REAL TIME, ABSORPTION, BIAS, ELECTRONS, EMISSION, RELEASE, SPECTRA, VARIABLES, IMAGES, SPECTRA, ELECTRICAL PROPERTIES, HOLES(ELECTRON DEFICIENCIES), ALLOYS, TELLURIUM, SELENIUM, SULFUR
Subject Categories : Electrical and Electronic Equipment
Metallurgy and Metallography
Radiation and Nuclear Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE