Accession Number : ADD016577

Title :   Semiconductor Cold Electron Emission Device.

Descriptive Note : Patent, Filed 29 Sep 93, patented 2 Aug 94,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Yoder, Max N

Report Date : 02 Aug 1994

Pagination or Media Count : 5

Abstract : A semiconductor cold electron emission device comprising a type I heterojunction formed of a P-type semiconductor mixture of AIN and a N-type semiconductor mixture of SiC which junction is forward biased so that electrons are monoenergetically emitted from the P-type semiconductor mixture.

Descriptors :   *ELECTRON EMISSION, *PATENTS, ELECTRONS, HETEROJUNCTIONS, MIXTURES, N TYPE SEMICONDUCTORS, P TYPE SEMICONDUCTORS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE