Accession Number : ADD016577
Title : Semiconductor Cold Electron Emission Device.
Descriptive Note : Patent, Filed 29 Sep 93, patented 2 Aug 94,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Yoder, Max N
Report Date : 02 Aug 1994
Pagination or Media Count : 5
Abstract : A semiconductor cold electron emission device comprising a type I heterojunction formed of a P-type semiconductor mixture of AIN and a N-type semiconductor mixture of SiC which junction is forward biased so that electrons are monoenergetically emitted from the P-type semiconductor mixture.
Descriptors : *ELECTRON EMISSION, *PATENTS, ELECTRONS, HETEROJUNCTIONS, MIXTURES, N TYPE SEMICONDUCTORS, P TYPE SEMICONDUCTORS
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE