Accession Number : ADD017259
Title : Low Temperature Process for Producing Indium-Containing Semiconductor Materials.
Descriptive Note : Patent, Filed 25 Feb 93, patented 13 Sep 94,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Gedridge, Robert W , Jr
Report Date : 13 Sep 1994
Pagination or Media Count : 4
Abstract : Chemical vapor deposition process for producing indium-containing semiconductor materials, particularly III/V indium-containing semiconductor materials, using triisopropylindium as the source of indium. In the process a flow of triisopropylindium and a flow of a group V source or precursor, e.g. AsH3, are directed into a reactor in contact with a heated substrate. The triisopropylindium and group V precursor are at least partially decomposed, depositing by chemical vapor deposition an indium-containing III/V semiconductor material on the substrate. The result is lower pyrolysis temperatures and less carbon impurity incorporation into the indium-containing semiconductor material than when commercially available indium sources are used.
Descriptors : *LOW TEMPERATURE, *COMPOSITE MATERIALS, *SEMICONDUCTORS, *INDIUM, *PATENTS, SOURCES, HYDRIDES, PRECURSORS, CHEMICAL VAPOR DEPOSITION, SUBSTRATES, CARBON, IMPURITIES, GROUP III COMPOUNDS, GROUP IV COMPOUNDS, GROUP V COMPOUNDS, HEAT, ARSENIC, PYROLYSIS
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Laminates and Composite Materials
Distribution Statement : APPROVED FOR PUBLIC RELEASE