Accession Number : ADD017309

Title :   Large Area Semiconductor Wafers.

Descriptive Note : Patent, Filed 29 Sep 93, patented 15 Nov 94,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Yoder, Max N

Report Date : 15 Nov 1994

Pagination or Media Count : 6

Abstract : A method of synthesizing a large area, single crystalline, semiconductor wafer in which the semiconductor is grown on a substrate having a lower melting temperature and higher specific gravity than the overlying semiconductor. The substrate is disposed within an open container or holder having a drain plug. First, a very thin layer of semiconductor is grown on the substrate. Then, the temperature is raised to melt the substrate and anneal the very thin layer of semiconductor. Next, growth of the semiconductor film now floating on the molten substrate is resumed until the desired thickness is obtained. Then, the molten substrate is drained from the holder, the temperature lowered to room temperature, and the nascent large area semiconductor wafer removed from the holder. In an alternate procedure, the molten substrate is not drained from the holder, but the semiconductor is grown to a thickness sufficient to force misfit defects in the underlying substrate as the temperature is lowered and the substrate resolidifies. (jg)

Descriptors :   *SEMICONDUCTORS, *WAFERS, *PATENTS, THICKNESS, LOW TEMPERATURE, SYNTHESIS, LAYERS, SINGLE CRYSTALS, EPITAXIAL GROWTH, SUBSTRATES, ROOM TEMPERATURE, MELTING, CONTAINERS, THINNESS, SEMICONDUCTING FILMS, PLUGS, SPECIFIC GRAVITY

Subject Categories : Electrical and Electronic Equipment
      Inorganic Chemistry
      Physical Chemistry
      Laminates and Composite Materials

Distribution Statement : APPROVED FOR PUBLIC RELEASE