Accession Number : ADD017313

Title :   Method for Laser-Assisted Etching of III-V and II-VI Semiconductor Compounds Using Chlorofluorocarbon Ambients.

Descriptive Note : Patent, Filed 10 Apr 90, patented 11 Oct 94,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Russell, Stephen D ; Sexton, Douglas A ; Orazi, Richard J

Report Date : 11 Oct 1994

Pagination or Media Count : 25

Abstract : An etching process allows a selective single-step patterning of III-V or Il-VI semiconductor compound devices such as GaAs and InP or CdS and ZnSe in a noncorrosive environment. The etching relies on a maskless laser-assisted technique in a gaseous chlorofluorocarbon ambient, such as gaseous dichlorodifluoromethane and chloropentafluoroethane. Laser-assisted photothermal chemical etching reactions on the Ill-V or Il-V semiconductor compounds occur in these ambients when the incident fluence from an excimer laser at 248 nm exceeds the melt threshold. This provides a means for thin membrane formation in Ill-V or Il-V semiconductor compounds, rapid etches and processing of packaged devices or partially fabricated dies. The reduction in processing steps as compared to conventional wet chemical etches provides improvements in yield, reliability and cost. (jg)

Descriptors :   *SEMICONDUCTORS, *LASERS, *ETCHING, *GROUP IIVI COMPOUNDS, *DICHLORODIFLUOROMETHANE, *CHLORINATED HYDROCARBONS, *PATENTS, ENVIRONMENTS, THRESHOLD EFFECTS, GALLIUM ARSENIDES, MELTS, PROCESSING EQUIPMENT, GASES, COSTS, RELIABILITY, CORROSION RESISTANCE, FLUORINE, PATTERNS, PACKAGING, ZINC, CADMIUM, MEMBRANES, GROUP III COMPOUNDS, THINNESS, INDIUM PHOSPHIDES, SULFIDES, SELENIDES

Subject Categories : Electrical and Electronic Equipment
      Inorganic Chemistry
      Organic Chemistry
      Metallurgy and Metallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE