Accession Number : ADD017399

Title :   Interband Lateral Resonant Tunneling Transistor.

Descriptive Note : Patent Application, Filed 14 Nov 94,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Meyer, J R ; Hoffman, C A ; Bartoli, F J

PDF Url : ADD017399

Report Date : 14 Nov 1994

Pagination or Media Count : 26

Abstract : This invention describes a nanometer scale interband lateral resonant tunneling transistor, and the method for producing the same, with lateral geometry, good fanout properties and suitable for incorporation into large-scale integrated circuits. The transistor is of a single gate design and operation is based on resonant tunneling processes in narrow-gap nanostructures which are highly responsive to quantum phenomena. Such quantum-effect devices can have very high density, operate at much higher temperatures and are capable of driving other devices. jg

Descriptors :   *PATENT APPLICATIONS, *RESONANCE, *TUNNELING, *TRANSISTORS, HIGH TEMPERATURE, QUANTUM THEORY, GATES(CIRCUITS), INTEGRATED CIRCUITS, HIGH DENSITY, FAN OUT CIRCUITS

Subject Categories : Electrical and Electronic Equipment
      Electricity and Magnetism
      Quantum Theory and Relativity

Distribution Statement : APPROVED FOR PUBLIC RELEASE