Accession Number : ADD017421

Title :   Operational Amplifier Using Bipolar Junction Transistors in Silicon-On-Sapphire.

Descriptive Note : Patent, Filed 20 May 93, patented 20 Dec 94,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Cartagena, Eric N

Report Date : 20 Dec 1994

Pagination or Media Count : 14

Abstract : A method for fabricating low leakage current bipolar junction transistors of silicon-sapphire for efficient use in operational amplifiers utilizes all implant technology, improved silicon conditioning processing, and low temperature annealing.

Descriptors :   *FABRICATION, *BIPOLAR TRANSISTORS, *PATENTS, ANNEALING, LOW TEMPERATURE, EFFICIENCY, ION IMPLANTATION, SAPPHIRE, SILICON, LEAKAGE(ELECTRICAL), SOLID STATE ELECTRONICS, JUNCTION TRANSISTORS, OPERATIONAL AMPLIFIERS

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE